SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes

Investigation of Remote-Phosphor White Light-Emitting Diodes with Multi-Phosphor Layers

Toward scatter-free phosphors in white phosphor-converted light-emitting diodes

Scatter-free phosphors promise to suppress the scattering loss of conventional micro-size powder phosphors in white phosphor-converted light-emitting diodes (pc-LEDs). Large micro-size cube phosphors (~100 μm) are newly designed and prepared as scatter-free phosphors, combining the two scatter-free conditions of particles based on Mie's scattering theory; the grain size or grain boundary was sm...

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED's color rendering index (CRI) are still problematic. Here, we use flip-chip ...

Novel Eu3+-doped red-emitting phosphor Gd2Mo3O9 for white-light-emitting-diodes (WLEDs) application

Xiaoxia Zhao a,b, Xiaojun Wang a,∗, Baojiu Chen a,c, Qingyu Meng a,b, Weihua Di a,b, Guozhong Ren a,b, Yanmin Yang a,b a Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, PR China b Graduate School of Chinese Academy of Sciences, Beijing 100039, PR China c Department of Physics, Dalian Maritime Univer...

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulati...